AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC
Converters
Mosfet Power Transistor Description:
AP25N10X use advanced VD MOST technology to
provide low RDS(ON), low gate charge, fast switching
This device is specially designed to get better ruggedness
and suitable to use in
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity or Invertors
Mosfet Power Transistor Features
VDS =100V I D =25 A
RDS(ON) < 55mΩ @ VGS=10V
RDS(ON) < 85mΩ @ VGS=4.5V
Mosfet Power Transistor Application
Consumer electronic power supply Motor control
Synchronous-rectification Isolated DC
Synchronous-rectification applications
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP25N10S | SOP-8 | AP25N10S XXX YYYY | 3000 |
| AP25N10D | TO-252-3 | AP25N10D XXX YYYY | 2500 |
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | +20 | V |
| ID@TC=25℃ | Drain Current, VGS @ 10V | 25 | A |
| ID@TC=100℃ | Drain Current, VGS @ 10V | 15 | A |
| IDM | Pulsed Drain Current1 | 60 | A |
| PD@TC=25℃ | Total Power Dissipation | 44.6 | W |
| PD@TA=25℃ | Total Power Dissipation | 2 | W |
| T STG | Storage Temperature Range | -55 to 150 | ℃ |
| T J | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Rthj-c | Maximum Thermal Resistance, Junction-case | 2.8 | ℃/W |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient (PCB mount) | 62.5 | ℃/W |
Electrical Characteristics@Tj=25 C(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250uA | 100 | - | - | V |
| RDS(ON) | Static Drain-Source On- Resistance2 | VGS =10V, I =12A | - | - | 55 | mΩ |
| VGS =5V, ID =8A | - | - | 85 | mΩ |
| VGS(th) | Gate Threshold Voltage | VDS =VGS , ID =250uA | 0.9 | - | 2.5 | V |
| gfs | Forward Transconductance | VDS =10V, I =12A | - | 14 | - | S |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V | - | - | 25 | uA |
| IGSS | Gate-Source Leakage | VGS = +20V, VDS =0V | - | - | +100 | nA |
| Qg | Total Gate Charge2 | ID=12A | - | 13.5 | 21.6 | nC |
| Qgs | Gate-Source Charge | - | 3 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 9 | - | nC |
| td(on) | Turn-on Delay Time2 | VDS =50V | - | 6.5 | - | ns |
| tr | Rise Time | - | 18 | - | ns |
| td(off) | Turn-off Delay Time | - | 20 | - | ns |
| tf | Fall Time | - | 5 | - | ns |
| Ciss | Input Capacitance | VGS =0V VDS =25V | - | 840 | 1340 | pF |
| Coss | Output Capacitance | - | 115 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 80 | - | pF |
| Rg | Gate Resistance | f=1.0MHz | - | 1.6 | - | Ω |
| VSD | Forward On Voltage2 | IS=12A, VGS =0V | - | - | 1.3 | V |
| trr | Reverse Recovery Time2 | IS=12A, VGS =0V dI/dt=100A/µs | - | 40 | - | ns |
| Qrr | Reverse Recovery Charge | | - | 70 | - | nC |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250uA | 100 | - | - | V |
| RDS(ON) | Static Drain-Source On- Resistance2 | VGS =10V, I =12A | - | - | 55 | mΩ |
| VGS =5V, ID =8A | - | - | 85 | mΩ |
| VGS(th) | Gate Threshold Voltage | VDS =VGS , ID =250uA | 0.9 | - | 2.5 | V |
| gfs | Forward Transconductance | VDS =10V, I =12A | - | 14 | - | S |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V | - | - | 25 | uA |
| IGSS | Gate-Source Leakage | VGS = +20V, VDS =0V | - | - | +100 | nA |
| Qg | Total Gate Charge2 | ID=12A | - | 13.5 | 21.6 | nC |
| Qgs | Gate-Source Charge | - | 3 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 9 | - | nC |
| td(on) | Turn-on Delay Time2 | VDS =50V | - | 6.5 | - | ns |
| tr | Rise Time | - | 18 | - | ns |
| td(off) | Turn-off Delay Time | - | 20 | - | ns |
| tf | Fall Time | - | 5 | - | ns |
| Ciss | Input Capacitance | VGS =0V VDS =25V | - | 840 | 1340 | pF |
| Coss | Output Capacitance | - | 115 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 80 | - | pF |
| Rg | Gate Resistance | f=1.0MHz | - | 1.6 | - | Ω |
| VSD | Forward On Voltage2 | IS=12A, VGS =0V | - | - | 1.3 | V |
| trr | Reverse Recovery Time2 | IS=12A, VGS =0V dI/dt=100A/µs | - | 40 | - | ns |
| Qrr | Reverse Recovery Charge | | - | 70 | - | nC |
Notes:
1. Pulse width limited by Max. junction temperature. 2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board
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