Ion implantation is a low-temperature process through which the
ions of an element are accelerated into a solid target, thereby
changing the physical, chemical or electrical properties of the
target. Ion implantation is used in semiconductor device
manufacturing, metal surface treatment and material science
research.
Ion implanter is the key equipment in making integrated circuit.
When ion beams being shot onto the surface of semi-conductor and
deposited, the carrier concentration and conduction type is
changed. Owning to its excellent surface modification, ion
implantation is widely applied in semi conducting material, metal,
ceramics, high-molecular polymer, etc. Ion implantation is
essential in making massive integrated circuit (IC). Molybdenum
parts are key components in ion source system of semi conductor ion
implanter to restrain and shield ionizing ray..molybdenum ion
implantation component for ion implanter.
Specification and chemical compositions
| Material | Type | Chemical Composition (by wt.) |
| Pure Tungsten | W1 | >99.95%min. Mo |
| Tungsten Copper Alloy | WCu | 10%~50% Cu / 50%~90% W |
| Tungten Heavy Alloy | WNiFe | 1.5 % - 10 % Ni, Fe, Mo |
| Tungten Heavy Alloy | WNiCu | 5 % - 9.8 % Ni, Cu |
| Tungsten Rhenium | WRe | 5,0 % Re |
| Moly Tungsten | MoW50 | 0,0 % W |
Advantages of tungsten Ion implantation parts
(1) The ion implantation layer has no obvious interface with the
matrix material, so there is no adhesion fracture or peeling on the
surface, and it is firmly bonded with the matrix.
(2) Ion implantation can accurately control the concentration and
depth distribution of implanted ions by controlling the
implantation dose, implantation energy and beam density.
(3) Ion implantation is generally carried out in room temperature
and vacuum. The machined workpiece surface is invisible and free of
oxidation. It can maintain the original dimensional accuracy and
surface roughness. It is especially suitable for the final process
of high-precision parts.
(4) Compressive stress can be formed on the surface layer of the
workpiece to reduce surface cracks.
(5) Clean high vacuum and non-toxic process and materials are
adopted, the treatment temperature is low, and the overall
performance of the material to be treated is not affected.
Application: tungsten ion implanter spare parts for semiconductor
1. Most tungsten parts for ion implantation are used in the
semiconductor industry;
2.We produce tungstem parts for ion implantation with high density,
purity and accuracy and homogenous internal structure;
3. Our tungsten parts for ion implantation are suitable for
moderate beam current implanter and strong beam current implanter;
4. Tungsten parts for ion implantation are made according to the
customer drawing.
