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NCV70517MW002R2G onsemi

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NCV70517MW002R2G onsemi

Here is the English description of the NCV70517MW002R2G chip:

  • Function: Dual N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current per Channel: 2A
  • On-Resistance per Channel: 2.5mΩ (max)
  • Operating Temperature: -40°C to 150°C
  • Package: Power SO-8

The NCV70517MW002R2G from ON Semiconductor is a dual N-channel power MOSFET.

Key Features:

  • Provides two independent 2A switching channels
  • Industry-leading low 2.5mΩ max RDS(on) for high efficiency
  • Extended temperature rating from -40°C to 150°C
  • Small Power SO-8 package saves space

Common Applications:

  • Point-of-load regulation requiring dual 2A switching
  • Motor drivers and power supply half-bridge circuits
  • Industrial systems demanding robust power devices

Benefits Include:

  • Optimized for applications up to 2A per channel
  • Enables compact dual channel designs from small package
  • Reliable Gatesource-Drain performance in harsh conditions

Well-suited for applications requiring precise dual 2A switching where high integration density and reliability are needed.

In summary, the NCV70517MW002R2G offers industry-leading dual 2A switching control from an ultra-compact Power MOSFET solution.

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