Here is a potential introduction for the ON Semiconductor
NCS20064DTBR2G Dual 60A N-Channel MOSFET:
NCS20064DTBR2G
The NCS20064DTBR2G is a high-power dual N-channel MOSFET solution
from ON Semiconductor capable of reliably switching up to 60A per
channel. Available in a rugged TO-247-3 package, it provides an
industry-standard solution for controlling substantial load
currents across two independent channels with integrated
protections.
Key Features:
- 80V maximum drain-source voltage rating per channel
- 60A continuous drain current per channel
- 0.29Ω typical RDS(on) per channel
- Integrated current balancing, undervoltage lockout and safe
operating area
- Reliable vibration-resistant TO-247-3 package
- -55°C to 150°C operating temperature range
Enables robust dual 60A switching in an automotive/industrial
package.
Independent channels maximize design flexibility and efficiency.
Low resistance supports high efficiency at significant load
currents.
On-chip protections simplify designs for complex switching
applications.
Rugged package withstands harsh conditions with high current
capabilities.
Cost-effective solution for applications requiring dual 60A load
control.
Ideal for industrial motor control, welding equipment and power
conversion.
Density and ruggedness optimized for demanding high current
multi-channel needs.
