Here is a potential introduction for the ON Semiconductor NE521DR2G
N-Channel MOSFET:
NE521DR2G
The NE521DR2G is a compact N-channel MOSFET from ON Semiconductor
providing up to 5A of high-efficiency switching capability in an
extremely space-efficient 2x3mm DFN package. As a low voltage
transistor, it enables dense power control in the most stringent
board area constraints.
Key Features:
- 60V maximum drain-source voltage rating
- 5A continuous drain current capability
- Industry-leading 2.1mΩ typical RDS(on)
- 2x3mm DFN package with exposed thermal pad
- -40°C to 150°C operating temperature range
Enables high current switching with minimal conduction losses.
Ultra-low resistance drives maximum efficiency in compact designs.
Exposed pad maximizes heat transfer from 5A loads.
Extended rating supports industrial/automotive load control
applications.
Exceptionally powerful MOSFET in one of the smallest available
footprints.
Simplifies dense layouts with leading performance in minimal board
space.
Ideal for applications requiring reliable, efficient switching in
tight spaces.
Facilitates sophisticated power distribution even in most
footprint-constrained designs.
