NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET

NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET

Features

• Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

Specifications

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

Trading Guides

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.