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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

    Buy cheap Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET from wholesalers
     
    Buy cheap Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET from wholesalers
    • Buy cheap Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET from wholesalers
    • Buy cheap Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET from wholesalers

    Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

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    Brand Name : Cersol
    Payment Terms : T/T IN ADVANCE
    Delivery Time : USUALLY 1 MONTH
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    Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

    Description


    Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small friction coefficients. It is the best ceramic material in comprehensive performance. It is widely used in the fields of aerospace, high -speed rail, and new energy vehicles. It is an important core heat dissipation material for insulation grid bipolar crystal pipes (IGBT) and silicon carbide power module (SIC MOSFET).


    Features

    • High hardness,high strength
    • Good antioxidant performance
    • Good thermal corrosion performance
    • Small thermal expansion coefficient
    • Small high temperature creep
    • Small friction coefficients

    Dimension

    DimensionThicknessLength and Width
    0.32mm114.3*114.3mm
    138*190mm
    Remarks: Customized according to customer requirements


    Materials Properties

    Materials PropertiesFormulaSi3N4
    ColorGrey/ White
    Density(g/cm3)≥3.20
    Surface roughness Ra
    (μm)
    0.200-0.600
    Flexural Strength
    (MPa)
    800
    Camber
    (Length‰)
    ≤3
    Thermal Conductivity
    (25
    ,W/m·k)
    80
    Coefficient of thermal expansion
    (10
    -6/K{40-400})
    2.0-3.0
    Coefficient of thermal expansion
    (10
    -6/K{40-800})
    2.0-3.0
    Dielectric Constant≥17
    Volume resistance≥1014








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