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S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies

    Buy cheap S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies from wholesalers
     
    Buy cheap S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies from wholesalers
    • Buy cheap S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies from wholesalers

    S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies

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    Brand Name : Infineon Technologies
    Model Number : S29CD016J0MQFM030
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
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    S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies

    Product Details


    General Description

    The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.

    Distinctive Characteristics

    Architecture Advantages
    ■ Simultaneous Read/Write operations
    — Read data from one bank while executing erase/
    program functions in other bank
    — Zero latency between read and write operations
    — Two bank architecture: large bank/small bank
    75%/25%
    ■ User-Defined x32 Data Bus
    ■ Dual Boot Block
    — Top and bottom boot sectors in the same device
    ■ Flexible sector architecture
    — CD032G: Eight 2K Double Word, Sixty-two 16K
    Double Word, and Eight 2K Double Word sectors
    — CD016G: Eight 2K Double Word, Thirty-two 16K
    Double Word, and Eight 2K Double Word sectors
    ■ Secured Silicon Sector (256 Bytes)
    — Factory locked and identifiable: 16 bytes for secure,
    random factory Electronic Serial Number; Also know
    as Electronic Marking
    ■ Manufactured on 170 nm Process Technology
    ■ Programmable Burst interface
    — Interfaces to any high performance processor
    — Linear Burst Read Operation: 2, 4, and 8 double
    word linear burst with or without wrap around
    ■ Program Operation
    — Performs synchronous and asynchronous write
    operations of burst configuration register settings
    independently
    ■ Single power supply operation
    — Optimized for 2.5 to 2.75 volt read, erase, and
    program operations
    ■ Compatibility with JEDEC standards (JC42.4)
    — Software compatible with single-power supply Flash
    — Backward-compatible with AMD/Fujitsu Am29LV/
    MBM29LV and Am29F/MBM29F flash memories

    Performance Characteristics

    ■ High performance read access
    — Initial/random access times of 48 ns (32 Mb) and 54
    ns (16 Mb)
    — Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
    ■ Ultra low power consumption
    — Burst Mode Read: 90 mA @ 75 MHz max
    — Program/Erase: 50 mA max
    — Standby mode: CMOS: 60 µA max
    ■ 1 million write cycles per sector typical
    ■ 20 year data retention typical
    ■ VersatileI/O™ control
    — Generates data output voltages and tolerates data
    input voltages as determined by the voltage on the
    VIO pin
    — 1.65 V to 3.60 V compatible I/O signals

    Software Features

    ■ Persistent Sector Protection
    — Locks combinations of individual sectors and sector
    groups to prevent program or erase operations
    within that sector (requires only VCC levels)
    ■ Password Sector Protection
    — Locks combinations of individual sectors and sector
    groups to prevent program or erase operations
    within that sector using a user-definable 64-bit
    password
    ■ Supports Common Flash Interface (CFI)
    ■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing
    multiple program command sequences
    ■ Data# Polling and toggle bits
    — Provides a software method of detecting program or
    erase operation completion

    Hardware Features

    ■ Program Suspend/Resume & Erase Suspend/
    Resume
    — Suspends program or erase operations to allow
    reading, programming, or erasing in same bank
    ■ Hardware Reset (RESET#), Ready/Busy# (RY/
    BY#), and Write Protect (WP#) inputs
    ■ ACC input
    — Accelerates programming time for higher throughput
    during system production
    ■ Package options
    — 80-pin PQFP
    — 80-ball Fortified BGA
    — Pb-free package option also available
    — Known Good Die

    Specifications

    AttributeAttribute Value
    ManufacturerCypress Semiconductor
    Product CategoryMemory ICs
    SeriesCD-J
    TypeBoot Block
    PackagingTray
    Mounting-StyleSMD/SMT
    Operating-Temperature-Range- 40 C to + 125 C
    Package-Case80-BQFP
    Operating-Temperature-40°C ~ 125°C (TA)
    InterfaceParallel
    Voltage-Supply1.65 V ~ 2.75 V
    Supplier-Device-Package80-PQFP (20x20)
    Memory Capacity16M (512K x 32)
    Memory-TypeFLASH - NOR
    Speed56MHz
    ArchitectureSector
    Format-MemoryFLASH
    StandardCommon Flash Interface (CFI)
    Interface-TypeParallel
    Organization512 k x 32
    Supply-Current-Max90 mA
    Data-Bus-Width32 bit
    Supply-Voltage-Max2.75 V
    Supply-Voltage-Min2.5 V
    Package-CasePQFP-80
    Maximum-Clock-Frequency56 MHz
    Timing-TypeAsynchronous Synchronous
    Functional compatible componentForm,Package,Functional compatible component
    Manufacturer Part#DescriptionManufacturerCompare
    S29CD016J0JQFI030
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0JQFI030
    S29CD016J0JQFI110
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0JQFI110
    S29CD016J0MQFI012
    Memory
    Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0MQFI012
    S29CD016J0MQFM010
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0MQFM010
    S29CD016J0MQFM110
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0MQFM110
    S29CD016J0JQFI112
    Memory
    Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0JQFI112
    S29CD016J0JQFI032
    Memory
    Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0JQFI032
    S29CD016J0MQFI013
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0MQFI013
    S29CD016J0PQFM110
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0PQFM110
    S29CD016J0MQAM130
    Memory
    Flash, 512KX32, 54ns, PQFP80, QFP-80Cypress SemiconductorS29CD016J0MQFM030 vs S29CD016J0MQAM130

    Descriptions

    FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-PQFP (20x20)
    NOR Flash Parallel/Serial 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin PQFP Tray
    Flash Memory
    Quality S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies for sale
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