GENERAL DESCRIPTION
The Micron® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks
x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double
data rate (DDR) format where the data is provided and synchronized
with a differential echo clock signal. RLDRAM does not require
row/column address multiplexing and is optimized for fast random
access and high-speed bandwidth.
RLDRAM is designed for communication data storages like transmit or
receive buffers in telecommunication systems as well as data or
instruction cache applications requiring large amounts of memory.
FEATURES
• 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
• Cyclic bank addressing for maximum data out bandwidth
• Non-multiplexed addresses
• Non-interruptible sequential burst of two (2-bit
prefetch) and four (4-bit prefetch) DDR
• Target 600 Mb/s/p data rate
• Programmable Read Latency (RL) of 5-8
• Data valid signal (DVLD) activated as read data is available
• Data Mask signals (DM0/DM1) to mask first and
second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• Pseudo-HSTL 1.8V I/O Supply
• Internal Auto Precharge
• Refresh requirements: 32ms at 100°C junction
temperature (8K refresh for each bank, 64K refresh
command must be issued in total each 32ms)
