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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

    Buy cheap 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc from wholesalers
     
    Buy cheap 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc from wholesalers
    • Buy cheap 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc from wholesalers

    71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

    Ask Lasest Price
    Brand Name : Renesas Electronics America Inc
    Model Number : 71V416S12BEI
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
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    71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

    Product Details


    Description

    The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
    The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

    Features

    ◆ 256K x 16 advanced high-speed CMOS Static RAM
    ◆ JEDEC Center Power / GND pinout for reduced noise.
    ◆ Equal access and cycle times
    – Commercial and Industrial: 10/12/15ns
    ◆ One Chip Select plus one Output Enable pin
    ◆ Bidirectional data inputs and outputs directly LVTTL-compatible
    ◆ Low power consumption via chip deselect
    ◆ Upper and Lower Byte Enable Pins
    ◆ Single 3.3V power supply
    ◆ Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

    Specifications

    AttributeAttribute Value
    ManufacturerIntegrated Circuit Systems
    Product CategoryMemory ICs
    Series71V416
    TypeAsynchronous
    PackagingTray Alternate Packaging
    Mounting-StyleSMD/SMT
    Package-Case48-TFBGA
    Operating-Temperature-40°C ~ 85°C (TA)
    InterfaceParallel
    Voltage-Supply3 V ~ 3.6 V
    Supplier-Device-Package48-CABGA (9x9)
    Memory Capacity4M (256K x 16)
    Memory-TypeSRAM - Asynchronous
    Speed12ns
    Access-Time12 ns
    Format-MemoryRAM
    Maximum Operating Temperature+ 85 C
    Operating temperature range- 40 C
    Interface-TypeParallel
    Organization256 k x 16
    Supply-Current-Max180 mA
    Part-#-Aliases71V416 IDT71V416S12BEI
    Supply-Voltage-Max3.6 V
    Supply-Voltage-Min3 V
    Package-CaseCABGA-48
    Functional compatible componentForm,Package,Functional compatible component
    Manufacturer Part#DescriptionManufacturerCompare
    IDT71V416S12BEI8
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEI8
    IDT71V416YS12BEG3
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YS12BEG3
    IDT71V416S12BEI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEI
    IDT71V416VS12BEGI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416VS12BEGI
    IDT71V416YS12BEGI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YS12BEGI
    IDT71V416YFS12BEI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, POWER, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YFS12BEI
    71V416VS12BEGI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs 71V416VS12BEGI
    71V416S12BEI8
    Memory    		CABGA-48, ReelIntegrated Device Technology Inc71V416S12BEI vs 71V416S12BEI8
    IDT71V416S12BEGI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEGI
    71V416S12BEGI
    Memory    		Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs 71V416S12BEGI

    Descriptions

    SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
    SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
    Quality 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc for sale

    71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

    Company Info.
    Sanhuang electronics (Hong Kong) Co., Limited
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