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W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics

    Buy cheap W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics from wholesalers
     
    Buy cheap W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics from wholesalers
    • Buy cheap W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics from wholesalers

    W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics

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    Brand Name : Winbond Electronics
    Model Number : W979H2KBVX2I
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
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    W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics

    Product Details


    GENERAL DESCRIPTION

    The W9712G6JB is a 128M bits DDR2 SDRAM, organized as 2,097,152 words ×4 banks ×16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general applications. W9712G6JB is sorted into the followingspeed grades: -18, -25, 25I, 25A and -3. The -18 is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25Aare compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade and 25A automotive grade which is guaranteed to support -40°C ≤TCASE ≤95°C). The -3 is compliant to the DDR2-667 (5-5-5) specification.

    FEATURES

    Power Supply: VDD, VDDQ= 1.8 V ±0.1 V
    Double Data Rate architecture: two data transfers per clock cycle
    CAS Latency: 3, 4, 5, 6 and 7
    Burst Length: 4 and 8
    Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data
    Edge-aligned with Read data and center-aligned with Write data
    DLL aligns DQ and DQS transitions with clock
    Differential clock inputs (CLK and CLK)
    Data masks (DM) for write data.
    Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
    Posted CAS programmable additive latency supported to make command and data bus efficiency
    Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
    Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
    Auto-precharge operation for read and write bursts
    Auto Refresh and Self Refresh modes
    Precharged Power Down and Active Power Down
    Write Data Mask
    Write Latency = Read Latency - 1 (WL = RL - 1)
    Interface: SSTL_18
    Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant

    Specifications

    AttributeAttribute Value
    ManufacturerWinbond Electronics
    Product CategoryMemory ICs
    Series-
    PackagingTray
    Package-Case134-VFBGA
    Operating-Temperature-40°C ~ 85°C (TA)
    InterfaceParallel
    Voltage-Supply1.14 V ~ 1.95 V
    Supplier-Device-Package134-VFBGA (10x11.5)
    Memory Capacity512M (16M x 32)
    Memory-TypeMobile LPDDR2 SDRAM
    Speed400MHz
    Format-MemoryRAM

    Descriptions

    SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 400MHz 134-VFBGA (10x11.5)
    HIGH SPEED SDRAM, CLOCK RATE UP TO 533 MHZ, FOUR INTERNAL BANKS
    Quality W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics for sale
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