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N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

    Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers
     
    Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits from wholesalers

    N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

    Ask Lasest Price
    Brand Name : JEUNKEI
    Model Number : JY11M
    Certification : ISO9001,CE
    Price : USD0.5-USD1/PC
    Payment Terms : T/T, , Western Union, Paypal
    Supply Ability : 1000pcs per day
    Delivery Time : depend on the order quantity /Negotiable
    • Product Details
    • Company Profile

    N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

    General Description:


    The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These
    features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.


    Features:


    ● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
    ● Fast switching and reverse body recovery
    ● Fully characterized avalanche voltage and current
    ● Excellent package for good heat dissipation


    Applications:


    ● Switching application
    ● Hard switched and high frequency circuits
    ● Power Management for Inverter Systems


    PIN Description:


    Absolute Maximum Ratings( Tc=25℃ Unless Otherwise Noted):


    SymbolParameterLimitUnit
    VDSDrain-Source Voltage100V
    VGSGate-Source Voltage±20V
    IDContinuous Drain CurrentTC=25℃110A
    TC=100℃82
    IDMPulsed Drain Current395A
    PDMaximum Power Dissipation210W
    TJTSTGOperating Junction and Storage Temperature Range-55~+175
    RΘJCThermal Resistance-Junction to Case0.65℃/W
    RθJA
    Thermal Resistance-Junction to Ambient62

    TO220-3 Package Outline:


    SymbolmminchSymbolmminch
    MinNomMaxMinNomMaxMinNomMaxMinNomMax
    A4.404.574.700.1730.1800.185Øp11.401.501.600.0550.0590.063
    A11.271.301.330.0500.0510.052e2.54BSC0.1BSC
    A22.352.402.500.0930.0940.098e15.08BSC0.2BSC
    b0.77-0.900.030-0.035H16.406.506.600.2520.2560.260
    b21.23-1.360.048-0.054L12.75-13.170.502-0.519
    C0.480.500.520.0190.0200.021L1--3.95--0.156
    D15.4015.6015.800.6060.6140.622L22.50REF.0.098REF.
    D19.009.109.200.3540.3580.362Øp3.573.603.630.1410.1420.143
    DEP0.050.100.200.0020.0040.008Q2.732.802.870.1070.1100.113
    E9.709.9010.100.3820.3890.398Θ1
    E1-8.7--0.343-Θ2
    E29.8010.0010.200.3860.940.401

    For more information, please directly contact with us via email: ivanzhu@junqitradinig.com



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