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Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

    Buy cheap Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer from wholesalers
     
    Buy cheap Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer from wholesalers
    • Buy cheap Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer from wholesalers
    • Buy cheap Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer from wholesalers
    • Buy cheap Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer from wholesalers

    Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

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    Brand Name : ZMKJ
    Model Number : CUSTOMIZED SIZE
    Price : by case
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 1-50pcs/month
    Delivery Time : 1-6weeks
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    Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer


    Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un-doped 4H-semi resistivity>1E7 3inch 4inch 0.35mm sic wafers


    About Silicon Carbide (SiC)Crystal

    Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.


    1. Description
    Property4H-SiC, Single Crystal6H-SiC, Single Crystal
    Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
    Stacking SequenceABCBABCACB
    Mohs Hardness≈9.2≈9.2
    Density3.21 g/cm33.21 g/cm3
    Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
    Refraction Index @750nm

    no = 2.61
    ne = 2.66

    no = 2.60
    ne = 2.65

    Dielectric Constantc~9.66c~9.66
    Thermal Conductivity (N-type, 0.02 ohm.cm)

    a~4.2 W/cm·K@298K
    c~3.7 W/cm·K@298K

    Thermal Conductivity (Semi-insulating)

    a~4.9 W/cm·K@298K
    c~3.9 W/cm·K@298K

    a~4.6 W/cm·K@298K
    c~3.2 W/cm·K@298K

    Band-gap3.23 eV3.02 eV
    Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
    Saturation Drift Velocity2.0×105m/s2.0×105m/s

    4 inch n-doped 4H Silicon Carbide SiC Wafer

    4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

    2inch diameter Silicon Carbide (SiC) Substrate Specification
    GradeZero MPD GradeProduction GradeResearch GradeDummy Grade
    Diameter100. mm±0.38mm
    Thickness350 μm±25μm or 500±25um Or other customized thickness
    Wafer OrientationOn axis : <0001>±0.5° for 4h-semi
    Micropipe Density≤1 cm-2≤5 cm-2≤10cm-2≤30 cm-2
    Resistivity4H-N0.015~0.028 Ω•cm
    6H-N0.02~0.1 Ω•cm
    4h-semi≥1E7 Ω·cm
    Primary Flat{10-10}±5.0°
    Primary Flat Length18.5 mm±2.0 mm
    Secondary Flat Length10.0mm±2.0 mm
    Secondary Flat OrientationSilicon face up: 90° CW. from Prime flat ±5.0°
    Edge exclusion1 mm
    TTV/Bow /Warp≤10μm /≤15μm /≤30μm
    RoughnessPolish Ra≤1 nm
    CMP Ra≤0.5 nm
    Cracks by high intensity lightNone1 allowed, ≤2 mmCumulative length ≤ 10mm, single length≤2mm
    Hex Plates by high intensity lightCumulative area ≤1%Cumulative area ≤1%Cumulative area ≤3%
    Polytype Areas by high intensity lightNoneCumulative area ≤2%Cumulative area ≤5%
    Scratches by high intensity light3 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length
    edge chipNone3 allowed, ≤0.5 mm each5 allowed, ≤1 mm each


    Applications:

    1) III-V Nitride Deposition

    2) Optoelectronic Devices

    3) High-Power Devices

    4) High-Temperature Devices

    5) High-Frequency Power Devices


    • Power Electronics:

      • High-Voltage Devices: SiC wafers are ideal for power devices that require high breakdown voltages. They are widely used in applications such as power MOSFETs and Schottky diodes, which are essential for efficient power conversion in automotive and renewable energy sectors.
      • Inverters and Converters: The high thermal conductivity and efficiency of SiC enable the development of compact and efficient inverters for electric vehicles (EVs) and solar inverters.
    • RF and Microwave Devices:

      • High-Frequency Amplifiers: The excellent electron mobility of SiC allows for the fabrication of high-frequency RF devices, making them suitable for telecommunications and radar systems.
      • GaN on SiC Technology: Our SiC wafers can serve as substrates for GaN (Gallium Nitride) devices, enhancing performance in RF applications.
    • LED and Optoelectronic Devices:

      • UV LEDs: SiC's wide bandgap makes it an excellent substrate for UV LED production, which is used in applications ranging from sterilization to curing processes.
      • Laser Diodes: The superior thermal management of SiC wafers improves the performance and longevity of laser diodes used in various industrial applications.
    • High-Temperature Applications:

      • Aerospace and Defense: SiC wafers can withstand extreme temperatures and harsh environments, making them suitable for aerospace applications and military electronics.
      • Automotive Sensors: Their durability and performance at high temperatures make SiC wafers ideal for automotive sensors and control systems.
    • Research and Development:

      • Material Science: Researchers utilize polished SiC wafers for various studies in material science, including investigations into semiconductor properties and the development of new materials.
      • Device Fabrication: Our wafers are used in laboratories and R&D facilities for the fabrication of prototype devices and the exploration of advanced semiconductor technologies.

    Production display show

    CATALOGUE COMMON SIZE In OUR INVENTORY LIST

    4H-N Type / High Purity SiC wafer/ingots
    2 inch 4H N-Type SiC wafer/ingots
    3 inch 4H N-Type SiC wafer
    4 inch 4H N-Type SiC wafer/ingots
    6 inch 4H N-Type SiC wafer/ingots

    4H Semi-insulating / High Purity SiC wafer

    2 inch 4H Semi-insulating SiC wafer
    3 inch 4H Semi-insulating SiC wafer
    4 inch 4H Semi-insulating SiC wafer
    6 inch 4H Semi-insulating SiC wafer
    6H N-Type SiC wafer
    2 inch 6H N-Type SiC wafer/ingot

    Customzied size for 2-6inch

    SiC Applications

    Application areas

    • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
    • diodes, IGBT, MOSFET
    • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

    >Packaging – Logistcs
    we concerns each details of the package , cleaning, anti-static , shock treatment .

    According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.


    Quality Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer for sale
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