Through Hole Electronic Integrated Circuits STW45NM60 MOSFET NCh
650 Volt 45 Amp
Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS
Gate- source voltage ±30 V ID Drain current (continuous) at TC =
25°C 45 A ID Drain current (continuous) at TC = 100°C 28 A IDM (1)
1. Pulse width limited by safe operating area Drain current
(pulsed) 180 A PTOT Total dissipation at TC = 25°C 417 W Derating
factor 3.33 W/°C dv/dt (2) 2. ISD < 45A, di/dt < 400A/µs, VDD
< 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg
Storage temperature –65 to 150 °C Tj Max. operating junction
temperature 150 °C Table 2. Thermal data Symbol Parameter Value
Unit Rthj-case Thermal resistance junction-case 0.3 °C/W Rthj-amb
Thermal resistance junction-amb 30 °C/W Tl Maximum lead temperature
for soldering purpose 300 °C Table 3. Avalanche characteristics
Symbol Parameter Max value Unit IAR Avalanche current, repetitive
or not-repetitive (pulse width limited by Tj max) 15 A EAS Single
pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V)
850 mJ
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