Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Toshiba IGBT Power Module MG200Q1US51 Transistor Module

MG200Q1US51

Product Description

Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51

Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)

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