PAM-XIAMEN offers Compound Semiconductor InSb wafer - Indium
antimonide which are grown by LEC(Liquid Encapsulated Czochralski)
as epi-ready or mechanical grade with n type, p type or
semi-insulating in different orientation(111)or(100).
Indium antimonide (InSb) is a crystalline compound made from the
elements indium (In) and antimony (Sb). It is a narrow-gap
semiconductor material from the III-V group used in infrared
detectors, including thermal imaging cameras,FLIR systems, infrared
homing missile guidance systems, and in infrared astronomy. The
indium antimonide detectors are sensitive between 1–5 µm
wavelengths. Indium antimonide was a very common detector in the
old, single-detector mechanically scanned thermal imaging systems.
Another application is as a terahertz radiation source as it is a
strong photo-Dember emitter.
| Electrical and Doping Specification |
| Conduction Type | n-type | n-type | n-type | n-type | p-type |
| Dopant | Undoped | Tellurium | Low tellurium | High tellurium | Genmanium |
| EPD cm-2 | 2"3"4"≤50 | 2"≤100 |
| Mobility cm² V-1s-1 | ≥4*105 | ≥2.5*104 | ≥2.5*105 | Not Specified | 8000-4000 |
| Carrier Concentration cm-3 | 5*1013-3*1014 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 | 5*1014-3*1015 |
1)2"(50.8mm)InSb
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP
2)2"(50.8mm)InSb
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP
3)2"(50.8mm)InSb
Orientation:(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP
4)2"(50.8mm)InSb
Orientation:(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP
5)2"(50.8mm)InSb
Thickness:525±25µm,
Orientation:[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=(4-8)E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final
Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm
(Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP
6)2"(50.8mm) GaSb
Thickness:525±25µm,
Orientation:[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP
Surface Condition and other Specification
Indium Antimonide (InSb) wafer can be offered as wafers with
as-cut, etched or polished finishes with wide range of doping
concentration and thickness. The wafer could be high quality
epi-ready finishing.
Orientation Specification
Wafer surface orientations are supplied to an accuracy of +/- 0.5
degrees using a triple axis X-Ray diffractometer system. Substrates
can also be supplied with very precise misorientations in any
direction from the growth plane. The available orientaiton could be
(100),(111), (110) or other orientation or mis degree.
Packaging condition
Polished wafer:individually sealed in two outer bags in inert
atmosphere. Cassette shipments are available if required).
As-cut Wafer:Cassette shipment. (Glassine bag available on
request).
Words Wiki
Indium antimonide (InSb) wafer is a crystalline compound made from
the elements indium (In) and antimony (Sb). It is a narrow-gap
semiconductormaterial from the III-V group used in infrared
detectors, including thermal imaging cameras, FLIR systems,
infrared homing missile guidancesystems, and in infrared astronomy.
The indium antimonide detectors are sensitive between 1–5 µm
wavelengths. Indium antimonide was a very common detector in the
old, single-detector mechanically scanned thermal imaging systems.
Another application is as a terahertz radiationsource as it is a
strong photo-Dember emitter.
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