P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade

P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

4" InAs Wafer Specification

What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Thermal properties of InAs Wafer

	Temperature dependence of thermal conductivity. n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017; p-type sample, po (cm-3): 3. 2.0·1017.
	Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
	Temperature dependence of specific heat at constant pressure

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

	Temperature dependence of linear expansion coefficient (low temperature)
	Temperature dependence of linear expansion coefficient (high temperature)
	Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Thermal properties of InAs Wafer

	Temperature dependence of thermal conductivity. n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017; p-type sample, po (cm-3): 3. 2.0·1017.
	Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
	Temperature dependence of specific heat at constant pressure

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

	Temperature dependence of linear expansion coefficient (low temperature)
	Temperature dependence of linear expansion coefficient (high temperature)
	Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.