Semi-Insulating ,GaAs Substrate With High Mobility , 2”,Prime Grade,Epi Ready

Semi-Insulating ,GaAs Substrate With High Mobility , 2”,Prime Grade,Epi Ready

PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Properties of GaAs Crystal

What is the GaAs Process?

GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

What is the Optical properties of GaAs Wafer?

Infrared refractive index

n = k1/2 = 3.255·(1 + 4.5·10-5T)
for 300 K n= 3.299

Long-wave TO phonon energy

hνTO = 33.81·(1 - 5.5·10-5 T) (meV)
for 300 K hνTO = 33.2 meV

Long-wave LO phonon energy

hνLO= 36.57·(1 - 4·10-5 T) (meV)
for 300 K hνLO = 36.1 meV

	Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3). Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis
	Normal incidence reflectivity versus photon energy. .
	Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures.

A ground state Rydberg energy RX1= 4.2 meV

	Intrinsic absorption edge at 297 K at different doping levels. n-type doping
	Intrinsic absorption edge at 297 K at different doping levels. p-type doping
	The absorption coefficient versus photon energy from intrinsic edge to 25 eV.
	Free carrier absorption versus wavelength at different doping levels, 296 K Conduction electron concentrations are: 1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3
	Free carrier absorption versus wavelength at different temperatures. no = 4.9·1017cm-3 Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K.

At 300 K

For λ~2 µm α=6·10-18 no (cm-1) (no - in cm-1)
For λ > 4µm and 1017<no<1018cm-3α ≈ 7.5·10-20no·λ3 (cm-1) (no - in cm-3, λ - µm)

Are You Looking for GaAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.