Semi-Insulating, GaAs Substrate, 2”, Mechanical Grade
PAM-XIAMEN Develops and manufactures compound semiconductor
substrates-gallium arsenide crystal and wafer. We has used advanced
crystal growth technology, vertical gradient freeze(VGF) and
(GaAs)Gallium Arsenide wafer processing technology. The required
electrical properties are obtained by adding dopants such as
silicon or zinc. The result is n-type or p-type high-resistance
(>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm)
semiconductors. The wafer surfaces are generally epi-ready
(extremely low contamination) i.e. their quality is suitable for
direct use in epitaxial processes.
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics
Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette |
Properties of GaAs Crystal
| Properties | GaAs |
| Atoms/cm3 | 4.42 x 1022 |
| Atomic Weight | 144.63 |
| Breakdown Field | approx. 4 x 105 |
| Crystal Structure | Zincblende |
| Density (g/cm3) | 5.32 |
| Dielectric Constant | 13.1 |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 |
| Electron Affinity (V) | 4.07 |
| Energy Gap at 300K (eV) | 1.424 |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 |
| Intrinsic Debye Length (microns) | 2250 |
| Intrinsic Resistivity (ohm-cm) | 108 |
| Lattice Constant (angstroms) | 5.6533 |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 |
| ΔL/L/ΔT (1/deg C) |
| Melting Point (deg C) | 1238 |
| Minority Carrier Lifetime (s) | approx. 10-8 |
| Mobility (Drift) | 8500 |
| (cm2/V-s) |
| µn, electrons |
| Mobility (Drift) | 400 |
| (cm2/V-s) |
| µp, holes |
| Optical Phonon Energy (eV) | 0.035 |
| Phonon Mean Free Path (angstroms) | 58 |
|
| Specific Heat | 0.35 |
| (J/g-deg C) |
| Thermal Conductivity at 300 K | 0.46 |
| (W/cm-degC) |
| Thermal Diffusivity (cm2/sec) | 0.24 |
| Vapor Pressure (Pa) | 100 at 1050 deg C; |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |
What is GaAs wafer?
Gallium arsenide (GaAs) is a compound of the elements gallium and
arsenic. It is a III-V direct band gap semiconductor with a zinc
blende crystal structure.
GaAs wafer is an important semiconducor material. It belongs to
group III-V compound semiconductor. It is a sphalerite type lattice
structure with a lattice constant of 5.65x 10-10m, a melting point
of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made
into semi insulating high resistance materials with resistivity
higher than silicon and germanium by more than three orders of
magnitude, which can be used to make integrated circuit substrate,
infrared detector, γ photon detector, etc. Because its electron
mobility is 5-6 times larger than that of silicon, it has been
widely used in microwave devices and high-speed digital circuits.
The semiconductor device made of GaAs has the advantages of high
frequency, high temperature and low temperature, low noise and
strong radiation resistance. In addition, it can also be used to
make bulk effect devices.
What is the Thermal properties of GaAs Wafer?
| Bulk modulus | 7.53·1011 dyn cm-2 |
| Melting point | 1240 °C |
| Specific heat | 0.33 J g-1°C -1 |
| Thermal conductivity | 0.55 W cm-1 °C -1 |
| Thermal diffusivity | 0.31cm2s-1 |
| Thermal expansion, linear | 5.73·10-6 °C -1 |
 | Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
|
 | Temperature dependence of thermal conductivity (for high
temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4.
8·1018;
p-type sample, po (cm-3): 5. 6·1019.
|
 | Temperature dependence of specific heat at constant pressure Ccl=
3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
|
 | Temperature dependence of linear expansion coefficient α
|
| Melting point | Tm=1513 K |
| For 0 < P < 45 kbar | Tm= 1513 - 3.5P (P in kbar) |
| Saturated vapor pressure | (in Pascals) |
| 1173 K | 1 |
| 1323 K | 100 |
Are You Looking for GaAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all
different kinds of projects. If you are looking for GaAs wafers,
send us enquiry today to learn more about how we can work with you
to get you the GaAs wafers you need for your next project. Our
group team is looking forward to providing both quality products
and excellent service for you!
