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Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

    Buy cheap Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade from wholesalers
     
    Buy cheap Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade from wholesalers
    • Buy cheap Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade from wholesalers

    Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

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    Brand Name : PAM-XIAMEN
    Payment Terms : T/T
    Supply Ability : 10,000 wafers/month
    Delivery Time : 5-50 working days
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    Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

    Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade


    PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.


    (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction TypeInsulating
    Growth MethodVGF
    DopantUndoped
    Wafer Diamter3, inchIngot available
    Crystal Orientation(100)+/- 0.5°
    OFEJ, US or notch
    Carrier Concentrationn/a
    Resistivity at RT>1E7 Ohm.cm
    Mobility>5000 cm2/V.sec
    Etch Pit Density<8000 /cm2
    Laser Markingupon request
    Surface FinishP/P
    Thickness350~675um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    Properties of GaAs Crystal

    PropertiesGaAs
    Atoms/cm34.42 x 1022
    Atomic Weight144.63
    Breakdown Fieldapprox. 4 x 105
    Crystal StructureZincblende
    Density (g/cm3)5.32
    Dielectric Constant13.1
    Effective Density of States in the Conduction Band, Nc (cm-3)4.7 x 1017
    Effective Density of States in the Valence Band, Nv (cm-3)7.0 x 1018
    Electron Affinity (V)4.07
    Energy Gap at 300K (eV)1.424
    Intrinsic Carrier Concentration (cm-3)1.79 x 106
    Intrinsic Debye Length (microns)2250
    Intrinsic Resistivity (ohm-cm)108
    Lattice Constant (angstroms)5.6533
    Linear Coefficient of Thermal Expansion,6.86 x 10-6
    ΔL/L/ΔT (1/deg C)
    Melting Point (deg C)1238
    Minority Carrier Lifetime (s)approx. 10-8
    Mobility (Drift)8500
    (cm2/V-s)
    µn, electrons
    Mobility (Drift)400
    (cm2/V-s)
    µp, holes
    Optical Phonon Energy (eV)0.035
    Phonon Mean Free Path (angstroms)58
    Specific Heat0.35
    (J/g-deg C)
    Thermal Conductivity at 300 K0.46
    (W/cm-degC)
    Thermal Diffusivity (cm2/sec)0.24
    Vapor Pressure (Pa)100 at 1050 deg C;
    1 at 900 deg C

    WavelengthIndex
    (µm)
    2.63.3239
    2.83.3204
    33.3169
    3.23.3149
    3.43.3129
    3.63.3109
    3.83.3089
    43.3069
    4.23.3057
    4.43.3045
    4.63.3034
    4.83.3022
    53.301
    5.23.3001
    5.43.2991
    5.63.2982
    5.83.2972
    63.2963
    6.23.2955
    6.43.2947
    6.63.2939
    6.83.2931
    73.2923
    7.23.2914
    7.43.2905
    7.63.2896
    7.83.2887
    83.2878
    8.23.2868
    8.43.2859
    8.63.2849
    8.83.284
    93.283
    9.23.2818
    9.43.2806
    9.63.2794
    9.83.2782
    103.277
    10.23.2761
    10.43.2752
    10.63.2743
    10.83.2734
    113.2725
    11.23.2713
    11.43.2701
    11.63.269
    11.83.2678
    123.2666
    12.23.2651
    12.43.2635
    12.63.262
    12.83.2604
    133.2589
    13.23.2573
    13.43.2557
    13.63.2541

    What is a GaAs Test Wafer?

    Most GaAs test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.


    What is the Basic Parameters at 300 K of GaAs Wafer?


    Crystal structureZinc Blende
    Group of symmetryTd2-F43m
    Number of atoms in 1 cm34.42·1022
    de Broglie electron wavelength240 A
    Debye temperature360 K
    Density5.32 g cm-3
    Dielectric constant (static )12.9
    Dielectric constant (high frequency)10.89
    Effective electron mass me0.063mo
    Effective hole masses mh0.51mo
    Effective hole masses mlp0.082mo
    Electron affinity4.07 eV
    Lattice constant5.65325 A
    Optical phonon energy0.035 eV

    Are You Looking for GaAs Wafer?

    PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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