4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device
Applications
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and
4H SiC in different quality grades for researcher and industry
manufacturers. We has developed SiC crystal growth technology and
SiC crystal wafer processing technology,established a production
line to manufacturer SiCsubstrate,Which is applied in
GaNepitaxydevice,powerdevices,high-temperature device and
optoelectronic Devices. As a professional company invested by the
leading manufacturers from the fields of advanced and high-tech
material research and state institutes and China’s Semiconductor
Lab,weare devoted to continuously improve the quality of currently
substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC, Research Grade,6”Size
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 |
| Description | Research Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| Resistivity (RT) | 0.012 – 0.0028 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical
polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis | <0001>± 0.5° |
| Off axis | 4°or 8° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70) mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
sic crystal defects
Most of the defects which were observed in SiC were also observed
in other crystalline materials. Like the dislocations, stacking
faults (SFs), low angle boundaries (LABs) and twins. Some others
appear in materials having the Zing- Blend or the Wurtzite
structure, like the IDBs. Micropipes and inclusions from other
phases mainly appear in SiC.
Refraction Index:
In optics the refractive index (or index of refraction) n of a
substance (optical medium) is a number that describes how light, or
any other radiation, propagates through that medium.
Refractive index of materials varies with the wavelength. This is
called dispersion; it causes the splitting of white light in prisms
and rainbows, and chromatic aberration in lenses. Inopaque media,
the refractive index is a complex number: while the real part
describes refraction, the imaginary part accounts for absorption.
The concept of refractive index is widely used within the full
electromagnetic spectrum, from x-rays to radio waves. It can also
be used with wave phenomena other than light (e.g.,sound). In this
case the speed of sound is used instead of that of light and a
reference medium other than vacuum must be chosen.
For infrared light refractive indices can be considerably higher.
Germanium is transparent in a wavelength of 589 nanometers and has
a refractive index of about 4, making it an important material for
infrared optics.
SiC refraction index: 2.55 (infrared; all polytypes)
