On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi
Ready,2”Size
PAM-XIAMEN provides high quality single crystal SiC (Silicon
Carbide)waferfor electronic and optoelectronic industry. SiC wafer
is a next generation semiconductor materialwith unique electrical
properties and excellent thermal properties for high temperature
and high power device application. SiC wafer can be supplied in
diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped ,
and semi-insulating type available. Please contact us for more
information.
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
6H N Type SiC Wafer, Production Grade,Epi Ready,2”Size
| SUBSTRATE PROPERTY | S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430 |
| Description | Production Grade 6H SiC Substrate |
| Polytype | 6H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| Resistivity (RT) | 0.02 ~ 0.1 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical
polish) |
| FWHM | <30 arcsec <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation |
| On axis | <0001>± 0.5° |
| Off axis | 3.5° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
SiC Crystal Structure
SiC Crystal has many different crystal structures,which is called
polytypes.The most common polytypes of SiC presently being
developed for electronics are the cubic 3C-SiC, the hexagonal
4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes
are characterized by the stacking sequence of the biatom layers of
the SiC structure.For more details, please enquire our engineer
team.
Stacking Sequence:
If we are going to make a laminated structure, we must know the
thickness of each ply and the angle of each ply traditionally in
degrees defined from the top layer down.
Mohs Hardness:
Rough measure of the resistance of a smooth surface to scratching
or abrasion, expressed in terms of a scale devised(1812)by the
German mineralogist Friedrich Mohs. The Mohs hardness of a mineral
is determined by observing whether its surface is scratched by a
substance of known or defined hardness.
Density:
The mass density or density of a material is its mass per unit volume. The symbol
most often used for density is ρ (the lower case Greek letter rho).
Mathematically, density is defined as mass divided by volume:
