Active Components Small Signal Schottky Diode BAT85 Wigh DO-35
Package
Features
· For general purpose applications
· These diodes features very low turn-on voltage and fast switching.
· These devices are protected by a PN junction guard ring against
excessive voltage, such as
electrostatic discharges.
· Diode is also available in the mini MELF case with type
designation BAS85
· High temperature soldering guaranteed: 260℃/10 seconds at
terminals
· Component in accordance to RoHS 2015/863/EU
Applications:
Applications where a very low forward voltage is required
ABSOLUTE RATINGES AND ELECTRICAL CHARACTER
Tj=25℃
| PARAMETER | SYMBOLS | VALUE | MIN | TYP | MAX | UNIT |
| Repetitive peak reverse voltage | VR | 30 | | | | Volts |
| Forward continuous current at TA=25°C | IF | 2001) | | | | mA |
Repetitive peak forward current at TP<1s, δTA=25°C | IFM | 3001) | | | | mA |
| Surge forward current at TP<10ms, TA=25°C | IFSM | 6001) | | | | mA |
| Power dissipation at TA=65°C | Ptot | 2001) | | | | mW |
| Junction temperature | TJ | 125 | | | | °C |
| Ambient operating temperature range | TA | -65 to +125 | | | | °C |
| Storage temperature range | TSTG | -65 to +150 | | | | °C |
| Reverse breakdown voltage tested with 100µA pulses | V(BR)R | | 30 | | | Volts |
Forward voltage Pulse test TP at IF=0.1mA, at IF=1mA, at IF=10mA, at IF=30mA, at IF=100mA, |
VF
| | |
0.50 |
0.24 0.32 0.4
0.8 |
Volts |
| Leakage current VR=25V | IR | | | | 2 | µA |
| Junction capacitance at VR=1V, f=1MHz | CJ | | | | 10 | pF |
| Reverse recovery time form IF=10mA, IR=1mA | TRR | | | | 5 | ns |
| Thermal resistance junction to ambient air | RJA | | | | 3002) | K/W |
NOTES:
1) Valid provided that leads at a distance of 4mm from case are
kept at ambient temperature
2) Valid provided that leads at a distance of 4mm from case are
kept at ambient temperature(DO-35)
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