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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

    Buy cheap TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type from wholesalers
     
    Buy cheap TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type from wholesalers
    • Buy cheap TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type from wholesalers

    TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

    Ask Lasest Price
    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : TO-92 A42
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    TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

    TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)


    FEATURE

    High voltage


    MARKING

    • A42=Device code
    • Solid dot=Green molding compound device, if none,the normal device
    • Z=Rank of hFE
    • XXX=Code


    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    A42TO-92Bulk10000
    A42-TATO-92Tape2000



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector-Base Voltage310V
    VCEOCollector-Emitter Voltage305V
    VEBOEmitter-Base Voltage5V
    I CCollector Curren t -Continuous200mA
    I CMCollector Current - Pulsed500mA
    PCCollector Power Dissipation625mW
    TJJunction Temperature150
    TstgStorage Temperature-55-150
    RӨJAThermal Resistance, junction to Ambient200℃ /mW
    RӨJCThermal Resistance, junction to Case83.3℃ /mW


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=100uA, IE=0310V
    Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=0305V
    Emitter-base breakdown voltageV(BR)EBOIE=100μA, IC=05V
    Collector cut-off currentICBOVCB=200V, IE=00.25μA
    Emitter cut-off currentIEBOVEB=5V, IC=00.1μA

    DC current gain

    hFE(1)VCE=10V, IC=1mA60
    hFE(2)VCE=10V, IC=10mA80250
    hFE(3)VCE=10V, IC=30mA75
    Collector-emitter saturation voltageVCE(sat)IC=20mA, IB=2mA0.2V
    Base-emitter saturation voltageVBE(sat)IC=20mA, IB=2mA0.9V
    Transition frequencyfTVCE=20V, IC=10mA,f=30MHZ50MHz


    CLASSIFICATION OF hFE(2)

    RANKABC
    RANGE100-150150-200200-300

    Typical Characteristics






    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015



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