6G03S 30V N+P-Channel Enhancement Mode MOSFET
Description
The 6G03S uses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications
General Features
N-channel P-channel
N-Channel
VDS = 30V,ID =6.5A
RDS(ON) < 16mΩ@ VGS=10V
P-Channel
VDS = -30V,ID = -7A
RDS(ON) < 37mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Package Marking and Ordering Information
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction
temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal
Characteristics (Curves)
