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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

    Buy cheap 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ from wholesalers
     
    Buy cheap 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ from wholesalers
    • Buy cheap 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ from wholesalers

    50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 50N06P/T
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    50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

    50N06P/T 200V N-Channel Enhancement Mode MOSFET

    Product Summary


    The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
    Quality 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ for sale
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