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2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

    Buy cheap 2N5401 High Power PNP Transistor VCBO -160V For Electronic Components from wholesalers
     
    Buy cheap 2N5401 High Power PNP Transistor VCBO -160V For Electronic Components from wholesalers
    • Buy cheap 2N5401 High Power PNP Transistor VCBO -160V For Electronic Components from wholesalers

    2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 2N5401
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    2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

    TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)


    FEATURE

    Ÿ Switching and Amplification in High Voltage

    Ÿ Applications such as Telephony

    Ÿ Low Current

    Ÿ High Voltage



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    2N5401TO-92Bulk1000pcs/Bag
    2N5401-TATO-92Tape2000pcs/Box

    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector-Base Voltage-160V
    VCEOCollector-Emitter Voltage-150V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current-0.6A
    PCCollector Power Dissipation625mW
    R0 JAThermal Resistance From Junction To Ambient200Š / W
    TjJunction Temperature150Š
    TstgStorage Temperature-55~+150Š


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= -0.1mA,IE=0-160V
    Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-150V
    Emitter-base breakdown voltageV(BR)EBOIE=-0.01mA,IC=0-5V
    Collector cut-off currentICBOVCB=-120V,IE=0-50nA
    Emitter cut-off currentIEBOVEB=-3V,IC=0-50nA

    DC current gain

    hFE(1)VCE=-5V, IC=-1mA80
    hFE(2)VCE=-5V, IC=-10mA100300
    hFE(3)VCE=-5V, IC=-50mA50
    Collector-emitter saturation voltageVCE(sat)IC=-50mA,IB=-5mA-0.5V
    Base-emitter saturation voltageVBE(sat)IC=-50mA,IB=-5mA-1V
    Transition frequencyfTVCE=-5V,IC=-10mA, f =30MHz100300MHz


    CLASSIFICATION OF hFE(2)

    RANKABC
    RANGE100-150150-200200-300

    Typical Characteristics





    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015




    TO-92 7DSH DQG 5HHO









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