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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

    Buy cheap D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors from wholesalers
     
    Buy cheap D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors from wholesalers
    • Buy cheap D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors from wholesalers

    D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : D882S
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    D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

    TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN)


    FEATURE

    Power dissipation


    MARKING

    D882=Device code

    Solid dot=Green molding compound device, if none,the normal device

    Z=Rank of hFE, XXX=Code



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    D882STO-92Bulk1000pcs/Bag
    D882S-TATO-92Tape2000pcs/Box



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

    SymbolPara meterValueUnit
    VCBOCollector-Base Voltage40V
    VCEOCollector-Emitter Voltage30V
    VEBOEmitter-Base Voltage6V
    ICCollector Current -Continuous3A
    PDCollector Power Dissipation625mW
    R0 JAThermal Resist ance f rom Junction to Ambient200Š / W
    TjJunction Temperature150Š
    TstgSt orage Temperature-55 ~+150Š


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified



    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC = 100µA, IE=040V
    Collector-emitter breakdown voltageV(BR)CEOIC = 10mA, IB=030V
    Emitter-base breakdown voltageV(BR)EBOIE= 100µA, IC=06V
    Collector cut-off currentICBOVCB= 40V, IE=01μA
    Collector cut-off currentICEOVCE= 30V, IB=010μA
    Emitter cut-off currentIEBOVEB= 6V, IC=01μA
    DC current gainhFEVCE=2V, IC= 1A60400
    Collector-emitter saturation voltageVCE(sat)IC= 2A, IB= 0.2 A0.5V
    Base-emitter saturation voltageVBE(sat)IC= 2A, IB= 0.2 A1.5V
    Transition frequency

    fT

    VCE= 5V , Ic=0.1A

    f =10MHz


    50

    80

    MHz


    CLASSIFICATION OF hFE(2)

    RankROYGR
    Range60-120100-200160-320200-400

    Typical Characteristics


    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015



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