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2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

Name: 2Inch 4inch Silicon Carbide Wafer 6HN 4HN Dummy SiC Crystal Wafers For Device Test
Brand: ZMKJ
Price: 1 USD

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Brand Name :	ZMKJ
Model Number :	*2inch0.625mmt**
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	2-4weeks

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2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

SILICON CARBIDE MATERIAL PROPERTIES

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

2 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade		Production Grade	Research Grade	Dummy Grade
Diameter		50.8 mm±0.38 mm
Thickness		330 μm±25μm or customzied
Wafer Orientation		On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward  1120  ±0.5° for 4H-N/4H-SI
Micropipe Density		≤5 cm-2	≤15 cm-2	≤50 cm-2
Resistivity	4H-N	0.015~0.028 Ω·cm
	6H-N	0.02~0.1 Ω·cm
	4/6H-SI	>1E5 Ω·cm		(90%) >1E5 Ω·cm
Primary Flat		{10-10}±5.0°
Primary Flat Length		15.9 mm±1.7 mm
Secondary Flat Length		8.0 mm±1.7 mm
Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion		1 mm
TTV/Bow /Warp		≤15μm /≤25μm /≤25μm
Roughness		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
Cracks by high intensity light		None	None	1 allowed, ≤1 mm
Hex Plates by high intensity light		Cumulative area≤1 %	Cumulative area≤1 %	Cumulative area≤3 %
Polytype Areas by high intensity light		None	Cumulative area≤2 %	Cumulative area≤5%
Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length	8 scratches to 1×wafer diameter cumulative length
Edge chip		None	3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

About ZMKJ Company

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

Our Relation Products
Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball/ Gap wafers

FAQ:

Q: What's the way of shipping and cost and pay term ?

A:(1) We accept 100％ T/T In advance by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 10pcs up.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

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2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

About Silicon Carbide (SiC)Crystal

silicon carbide substrate

sic wafer

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

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