100 watt High Power Laser Diode Bar , 808 nm QCW Laser Diode
Unmounted Bar
Semiconductor lasers are the centerpiece of most of today’s
industrial laser systems. Whether direct material processing or
optical pumping of solid-state lasers, fiber lasers or disc lasers,
the unmounted single emitters and bars are the key component for
the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology from
1998, delivers the multimode high power at wavelengths between 635
and 1064nm.
- High Power multimode unmounted bars up to 40W CW and 200W QCW
output
- Unmounted single emitters up to 2W CW Power
- Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm
Parameters(25℃)
| Parameter | Unit | LDAQ1-0808-0100 |
| Optical Parameter | Operation Mode | - | QCW |
| Output Power Po | W | 100 |
| Center Wavelength λc | nm | 808 ± 5 |
| Geometrical | Fill Factor | - | 87% |
| Number of Unmounted Single Emitters | - | 100 |
| Electrical Parameter | Slope Efficiency Es | W/A | ≥1.2 |
| Threshold Current Ith | A | ≤20 |
| Operating Current If | A | ≤100 |
| Operating Voltage Vf | V | ≤3 |
Notice
1. Item notice: LDAQ1( item model)-****( center wavelength)-****(
output power).
2. Data sheet is based on the result of testing under 25℃,pulse
width 200μs, frequency 1-100Hz, maximum duty cycle 2%, and typical
application 0.4%.
3. Data sheet is based on the CS package testing.
4. For more information, please contact Hi-Tech Optoelectronics
Co., Ltd.
