TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

Name: TO268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
Brand: IXYS
Price: 1 USD

Ask Lasest Price
Brand Name :	IXYS
Model Number :	IXBT14N300HV
Price :	Negotiable
Supply Ability :	1000000pcs

Add to Cart

Product Details
Company Profile

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT)

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of the IXBx14N300HV BiMOSFET IGBTs serve as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Using the IXBx14N300HV BiMOSFET IGBTs, power designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying associated gate drive circuitry. This feature results in a much simpler system design with a lower cost and improved reliability.

The IXYS IXBx14N300HV BiMOSFET™ IGBTs are available in TO-263HV (IXBA14N300HV) and TO-268HV (IXBT14N300HV) packages. These devices feature a -55°C to +150°C junction temperature range.

FEATURES

"Free" intrinsic body diode
Saves space by eliminating multiple series-parallel lower voltage, lower current rated devices
High power density
High-frequency operation

Low conduction losses
MOS gate turn on for drive simplicity
4000V electrical isolation
Low gate drive requirements

APPLICATIONS

Switch-mode and resonant-mode power supplies
Uninterruptible power supplies (UPS)
Laser generators

Capacitor discharge circuits
AC switches

SPECIFICATIONS

3000V collector-emitter voltage (VCES)
3000V collector-gate voltage (VCGR)
±20V gate-emitter voltage (VGES)
±38A collector current at +25°C (IC25)
±100nA gate leakage current (IGES)

±14A collector current at +110°C (IC110)
2.7V collector-emitter saturation voltage (VCE(sat))
10μs short-circuit-withstand time (tsc)
200W collector power dissipation (PC)
-55°C to +150°C junction temperature range

PIN DESIGNATIONS & SCHEMATIC

Mechanical Drawing - IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

TO-263HV PACKAGE OUTLINE

TO-268HV PACKAGE OUTLINE

Product Tags:

Verified Supplier

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Send your message to this supplier

*From:
Your email address is incorrect!
To: HongKong Wei Ya Hua Electronic Technology Co.,Limited
*Subject:
Your subject must be between 10-255 characters!
*Message:
For the best results, we recommend including the following details: --Self introduction --Required specifications --Inquire about price/MOQ Your message must be between 20-3,000
Yes! I would like your verified suppliers matching service!

All Categories

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT)

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

FEATURES

APPLICATIONS

SPECIFICATIONS

PIN DESIGNATIONS & SCHEMATIC

TO-263HV PACKAGE OUTLINE

TO-268HV PACKAGE OUTLINE

TO-268HV IGBT Transistor Module

IGBT Transistor Module 200W

IGBT IXBT14N300HV

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

You May Like

TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole

FGHL75T65MQDTL4 Field Stop Trench IGBT 650V 80A 375W Through Hole TO-247-4L

FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

IXYX110N120B4 Trench Field Stop IGBT 1200V 340A 1360W Through Hole

IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV


*From:	Your email address is incorrect!
*To:	HongKong Wei Ya Hua Electronic Technology Co.,Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!