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| Brand Name : | HMT |
| Model Number : | 4 inch |
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| Payment Terms : | T/T |
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| Delivery Time : | 1 month |
4 inch GaN-on-Si epi wafer manufacturer Power HEMT
Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:
5G-related RF devices, such as power amplifier
High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
Durable and reliable devices in harsh environments
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High-end sensor devices
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