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2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

    Buy cheap 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates from wholesalers
     
    Buy cheap 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates from wholesalers
    • Buy cheap 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates from wholesalers
    • Buy cheap 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates from wholesalers

    2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

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    Brand Name : BonTek
    Model Number : Sapphire (Al2O3)
    Certification : ISO:9001
    Price : Negotiable
    Payment Terms : T/T
    Supply Ability : 10000 pieces/Month
    Delivery Time : 1-4 weeks
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    2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

    2 Inch Sapphire Crystal C Plane Polished Sapphire Wafers Sapphire Substrates


    Specification:
    Single crystal Al2O3 99.999%
    Orientation: R-axis 0.5°

    Diameter:50.8±0.1mm

    Thickness :430±15um or 330±15um

    Primary flat:16±1mm

    OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)

    Frontside Surface Roughness:Ra<0.2nm

    Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra<0.2nm)

    TTV:<10um BOW:-10~0um WARP:<10um

    Laser Mark Series No. by needs

    Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

    Cleanliness :Free visible contamination


    1. Sapphire has a high optical transmittance, so it is widely used as microelectronic tube dielectric material, ultrasonic conduction element, waveguide laser cavity, and other optical elements, as window materials for infrared military devices, space vehicles, high-intensity lasers and optical communications.

    2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so sapphire substrate is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing, and other precision manufacturing (wear resistance), coal, gas, well detection sensors and detector windows (anti-corrosion).

    3. Sapphire has the characteristics of electrical insulation, transparency, good thermal conductivity, and high rigidity, so it can be used as the substrate material of integrated circuits, such as LED and microelectronic circuits, ultra-high-speed integrated circuit.



    OPTICAL PROPERTIES of SAPPHIRE Al2O3

    Transmission Range

    0.17 to 5.5 microns

    Refractive Index

    1.75449 (o) 1.74663 (e) at 1.06 microns

    Reflection Loss

    at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

    Index of Absorption

    0.3 x 10-3 cm-1 at 2.4 microns

    dN/dT

    13.7 x 10-6 at 5.4 microns

    dn/dm = 0

    1.5 microns


    PHYSICAL PROPERTIES of SAPPHIRE Al2O3

    Density

    3.97 g/cm3

    Melting Point

    2040 degrees C

    Thermal Conductivity

    27.21 W/(m x K) at 300 K

    Thermal Expansion

    5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

    Hardness

    Knoop 2000 kg/mm 2 with 2000g indenter

    Specific Heat Capacity

    419 J/(kg x K)

    Dielectric Constant

    11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

    Young's Modulus (E)

    335 GPa

    Shear Modulus (G)

    148.1 GPa

    Bulk Modulus (K)

    240 GPa

    Elastic Coefficients

    C11=496 C12=164 C13=115
    C33=498 C44=148

    Apparent Elastic Limit

    275 MPa (40,000 psi)

    Poisson Ratio

    0.25



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