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LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver

    Buy cheap LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver from wholesalers
     
    Buy cheap LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver from wholesalers
    • Buy cheap LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver from wholesalers

    LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver

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    Brand Name : Original Factory
    Model Number : LMG3425R030RQZR
    Certification : Lead free / RoHS Compliant
    Price : Contact for Sample
    Payment Terms : T/T, L/C, Western Union
    Delivery Time : 5-8 work days
    • Product Details
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    LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver

    Gate Drivers LMG3425R030RQZR GaN FET with integrated driver and ideal diode mode VQFN54


    Description

    LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.


    Specifications

    Driver ICs - Various
    High-Side, Low-Side
    SMD/SMT
    VQFN-54
    1 Driver
    1 Output
    7.5 V
    18 V
    Inverting, Non-Inverting
    2.5 ns
    21 ns
    - 40 C
    + 125 C

    Applications

    • High density industrial power supplies
    • Solar inverters and industrial motor drives
    • Uninterruptable power supplies
    • Merchant network and server PSU
    • Merchant telecom rectifiers​

    Features

    Qualified for JEDEC JEP180 for hard-switching
    topologies
    600
    -V GaN-on-Si FET with Integrated gate driver
    Integrated high precision gate bias voltage
    200-V/ns CMTI
    2.2
    -MHz switching frequency
    30-V/ns to 150-V/ns slew rate for optimization
    of switching performance and EMI mitigation
    Operates from 7.5-V to 18-V supply
    Robust protection
    Cycle-by-cycle overcurrent and latched short-
    circuit protection with < 100-ns response
    Withstands 720-V surge while hard-switching
    Self-protection from internal overtemperature
    and UVLO monitoring
    Advanced power management
    Digital temperature PWM output
    Ideal diode mode reduces third-quadrant losses
    in
    LMG3425R030
    • Qualified for JEDEC JEP180 for hard-switching topologies
    • 600-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5-V to 18-V supply
    • Robust protection
    • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
    • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3425R030

    Measurement to Determine Propagation Delays and Slew Rates



    Qualified for JEDEC JEP180 for hard-switching
    topologies
    600
    -V GaN-on-Si FET with Integrated gate driver
    Integrated high precision gate bias voltage
    200-V/ns CMTI
    2.2
    -MHz switching frequency
    30-V/ns to 150-V/ns slew rate for optimization
    of switching performance and EMI mitigation
    Operates from 7.5-V to 18-V supply
    Robust protection
    Cycle-by-cycle overcurrent and latched short-
    circuit protection with < 100-ns response
    Withstands 720-V surge while hard-switching
    Self-protection from internal overtemperature
    and UVLO monitoring
    Advanced power management
    Digital temperature PWM output
    Ideal diode mode reduces third-quadrant losses
    in
    LMG3425R030
    Qualified for JEDEC JEP180 for hard-switching
    topologies
    600
    -V GaN-on-Si FET with Integrated gate driver
    Integrated high precision gate bias voltage
    200-V/ns CMTI
    2.2
    -MHz switching frequency
    30-V/ns to 150-V/ns slew rate for optimization
    of switching performance and EMI mitigation
    Operates from 7.5-V to 18-V supply
    Robust protection
    Cycle-by-cycle overcurrent and latched short-
    circuit protection with < 100-ns response
    Withstands 720-V surge while hard-switching
    Self-protection from internal overtemperature
    and UVLO monitoring
    Advanced power management
    Digital temperature PWM output
    Ideal diode mode reduces third-quadrant losses
    in
    LMG3425R030

    FAQ
    Q. Are your products original?
    A: Yes, all products are original, new original import is our purpose.
    Q:Which Certificates do you have?
    A:We are ISO 9001:2015 Certified Company and member of ERAI.
    Q:Can you support small quantity order or sample?Is the sample free?
    A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
    Q:How to ship my order? Is it safe?
    A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
    Q:What about the lead time?
    A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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