| Voltage Rating (DC) | 30.0 V |
| Current Rating | 21.0 A |
| Number of Channels | 1 |
| Number of Positions | 8 |
| Drain to Source Resistance (on) (Rds) | 3.6 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 mW |
| Threshold Voltage | 1.4 V |
| Input Capacitance | 3.61 nF |
| Gate Charge | 65.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 21.0 A |
| Rise Time | 12 ns |
Application:
Household appliances
The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process.
It is designed to replace a single SO-8 MOSFET and Schottky diode
in synchronous DC-to-DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a low RDS (ON)
and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET™ technology.
Company Advantages:
Shenzhen Ruizhixinda Electronics Co., LTD.
Is a company with decades of experience in the wholesale agency of
electronic components,
We have the power of agency and factory cooperation of various
components brands.
Extensive and complete electronic components storage warehouse,
Including rare, rare, unique, and now popular components.
Inventory for 100% Original & New products.
If you need any one, please contact us.
We will provide perfect and high quality products.
Product picture:
