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GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation

    Buy cheap GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation from wholesalers
     
    Buy cheap GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation from wholesalers
    • Buy cheap GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation from wholesalers

    GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation

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    Brand Name : UV
    Model Number : GT-UVV-LW
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2000pcs/Month
    Delivery Time : 3-5work days
    Price : Negotiable
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    GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation

    Product Description:

    GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation


    Features:

    General Features: l Indium Gallium Nitride Based Material

    l Photovoltaic mode operation

    l TO-46 metal housing

    l High responsivity and low dark current

    Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing

    Parameters Symbol Value Unit Maximum ratings

    Operation temperature range Topt -25-85 oC

    Storage temperature range Tsto -40-85 oC

    Soldering temperature (3 s) Tsol 260 oC

    Reverse voltage Vr-max -10 V

    General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id

    <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 p>


    Specifications:

    SpecificationsParameters
    Peak wavelength390nm
    Light sensitivity0.289A/W
    Spectral response range (R=0.1×Rmax)- 290-440 nm
    UV-visible rejection ratio (Rmax/R400 nm)- >10

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