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UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

    Buy cheap UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation from wholesalers
     
    Buy cheap UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation from wholesalers
    • Buy cheap UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation from wholesalers

    UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

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    Brand Name : YJJ
    Model Number : GS-AB-S
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 1501/pcs/pre
    Delivery Time : 3-5work days
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    UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

    Product Description:

    GS-AB-S GaN-based UV photodiode


    Features:

    Broad band UVA+UVB+UVC photodiode

    Photovoltaic mode operation

    TO-46metal housing

    Good visible blindness

    High responsivity and low dark current

    UV index monitoring, UV radiation dose measurement, flame detection

    Specification


    ParametersSymbolValueUnit
    Maximum ratings
    Operation temperature rangeTopt-25-85oC
    Storage temperature rangeTsto-40-85oC
    Soldering temperature (3 s)Tsol260oC
    Reverse voltageVr-max-10V
    General characteristics (25 oC)
    Chip sizeA1mm2
    Dark current (Vr = -1 V)Id<1nA
    Temperature coefficient (@265 nm)Tc0.05%/ oC
    Capacitance (at 0 V and 1 MHz)Cp18pF
    Spectral response characteristics (25 oC)
    Wavelength of peak responsivityλ p355nm
    Peak responsivity (at 355 nm)Rmax0.20A/W
    Spectral response range (R=0.1×Rmax)-210-370nm
    UV-visible rejection ratio (Rmax/R400 nm)->104-

    Specifications:

    SpecificationsParameters
    Peak wavelength355NM
    Light sensitivity0.20A/W
    Rise time3US
    Test conditionstypical values, Ta=25°

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