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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

    Buy cheap S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current from wholesalers
     
    Buy cheap S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current from wholesalers
    • Buy cheap S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current from wholesalers
    • Buy cheap S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current from wholesalers
    • Buy cheap S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current from wholesalers

    S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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    Brand Name : Hamamatsu
    Model Number : S2386-8K
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 3000/pcs/month
    Delivery Time : 3-5work days
    Price : Negotiable
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    S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

    Product Description:

    S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current


    Features:

    Suitable for visible light to near infrared band, universal photometric determination

    Product features

    ● High sensitivity in visible to near infrared band

    ● Low dark current

    ● High reliability

    ● High linearity

    Rise time (typical value). 10 mu s

    Junction capacitance (typical value) 4300 pF

    Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz


    Specifications:

    spectral response range is320 to 1100 nm
    Peak sensitivity wavelength (typical value)960 nm
    Sensitivity (typical value)0.6 A/W
    Dark current (Max.)50 pA


    Quality S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current for sale
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