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S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor

    Buy cheap S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor from wholesalers
     
    Buy cheap S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor from wholesalers
    • Buy cheap S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor from wholesalers

    S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor

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    Brand Name : Hamamatsu
    Model Number : S8746-01
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 1000pcs/Month
    Delivery Time : 3-5work days
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    S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor

    Product Description:

    S8746-01 Silicon Pin Photodiode Preamplifiers Infrared Photoelectric Sensor Integrated Resistor


    Features:

    A photodiode with integrated feedback resistors and capacitors for preamplifiers

    S8746-01 is a low-noise sensor composed of photodiodes, operational amplifiers, feedback resistors and capacitors, all packaged in a very small package. When connected to a power source, it can be used for weak light measurements, such as analysis devices or measuring devices. Its light sensitive surface is connected to the GND end, so that it can suppress EMC noise very high.

    Product features

    ● Suitable for precise photometric determination from ultraviolet to near infrared

    ● Small metal package with quartz window: TO-8

    ● Photosensitive area: 5.8×5.8 mm

    ● Built-in Rf=1 Gω Cf=5 pF

    ● Low power FET input op-amp

    Low noise, low NEP

    ● External resistance to achieve variable gain

    ● Package with shielding function

    ● EMC noise resistance


    Specifications:

    Reverse voltage (Max.)20 V
    spectral response range is190 to 1100 nm
    Peak sensitivity wavelength (typical value)960 nm
    Noise equivalent power (typical value)15×10-15 W/Hz1/2
    Measurement conditionsTyp. Ta=25 ℃, F =10Hz, λ=λp, unless otherwise noted

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