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G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

    Buy cheap G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss from wholesalers
     
    Buy cheap G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss from wholesalers
    • Buy cheap G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss from wholesalers
    • Buy cheap G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss from wholesalers

    G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

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    Brand Name : Hamamatsu
    Model Number : G8370-81
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2000pcs/Month
    Delivery Time : 3-5work days
    Price : Negotiable
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    G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

    Product Description:

    G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss


    Features:

    Low PDL(polarization dependent loss)

    InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.

    Product features

    Low PDL(polarization dependent loss)

    ● Low noise, low dark current

    ● Large photographic area

    ● Photosensitive area: φ1 mm

    Noise equivalent power (typical value) 2×10-14 W/ hz1/2

    Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted


    Specifications:

    peak sensitivity wavelength (typical value) was1.55 μm
    Sensitivity (typical value)1.1 A/W
    Dark current (maximum)5 nA
    Cutoff frequency (typical value)35 MHz
    Junction capacitance (typical value)90 pF
    Noise equivalent power (typical value)2×10-14 W/ hz1/2

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