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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

    Buy cheap S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity from wholesalers
     
    Buy cheap S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity from wholesalers
    • Buy cheap S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity from wholesalers
    • Buy cheap S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity from wholesalers
    • Buy cheap S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity from wholesalers

    S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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    Brand Name : Hamamatsu
    Model Number : S1226-8BQ
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 3000/pcs/pre
    Delivery Time : 3-5work days
    Price : Negotiable
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    S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

    Product Description:

    S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity


    Features:

    ● High UV sensitivity: QE = 75% (λ=200 nm)

    ● Suppress NIR sensitivity

    ● Low dark current

    ● High reliability

    Dark current (maximum) 20 pA

    Rise time (typical value). 2 mu s

    Junction capacitance (typical value) 1200 pF

    Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz


    Specifications:

    Reverse voltage (Max.)5V
    spectral response range is190 to 1000 nm
    peak sensitivity wavelength (typical value) was720 nm
    Typeinfrared photoelectricity


    Quality S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity for sale
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