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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

    Buy cheap S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band from wholesalers
     
    Buy cheap S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band from wholesalers
    • Buy cheap S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band from wholesalers
    • Buy cheap S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band from wholesalers

    S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

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    Brand Name : Hamamatsu
    Model Number : S1337-66BQ
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 311/pcs/pre
    Delivery Time : 3-5work days
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    S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

    Product Description:

    S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band


    Features:

    Suitable for precise photometric determination from ultraviolet to infrared band

    High UV sensitivity: QE = 75% (λ=200 nm)

    Low capacitance

    Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz


    Specifications:

    Peak sensitivity wavelength (typical value)960 nm
    Sensitivity (typical value)0.5 A/W
    Dark current (maximum)100 pA
    Rise time (typical value)1 mu s
    Junction capacitance (typical value)

    380 pF



    1337-66.PNG

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