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​High Purity Mo Ion Implanting Products For Semiconductor Application

    Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers
     
    Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers
    • Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers
    • Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers
    • Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers
    • Buy cheap ​High Purity Mo Ion Implanting Products For Semiconductor Application from wholesalers

    ​High Purity Mo Ion Implanting Products For Semiconductor Application

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    Brand Name : JX
    Model Number : ​High Purity W,Mo Ion Implanting Products for semiconductor Application
    Certification : ISO 9001
    Price : Negotiable
    Payment Terms : L/C, T/T, D/P, Western Union
    Supply Ability : 500 kg per month
    Delivery Time : 15-20 days
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    ​High Purity Mo Ion Implanting Products For Semiconductor Application

    ​High Purity W,Mo Ion Implanting Products for semiconductor Application


    application


    During ion implantation, the conversion of the ion source into plasma ions will produce a working temperature of more than 2000 ℃, and when the ion beam erupts, it will also produce a lot of ion kinetic energy, and the general metal will soon be burned. Therefore, inert metals with relatively large mass and density are needed to maintain the direction of ion beam eruption and increase the durability of components. Tungsten materials have the advantages of stable high-temperature chemical properties, small thermal denaturation and long service life, and have become the first choice of ion sources and consumables for ion implanters in the semiconductor industry. The shielding cylinder of the emission cathode, the emission panel, the central fixed rod, the wire electrode plate in the arc starting chamber, etc. are collectively referred to as ion implanted tungsten parts


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