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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

    Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier from wholesalers
     
    Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier from wholesalers
    • Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier from wholesalers
    • Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier from wholesalers
    • Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier from wholesalers

    V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

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    Brand Name : Vishay General Semiconductor
    Model Number : V20PWM45-M3/I V20PWM45HM3/I
    Payment Terms : T/T
    Delivery Time : 2~8 workdays
    MOQ : 1 pc
    Price : Negotiated
    • Product Details
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    V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

    Product Description


    V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottk


    V20PWM45 V20PWM45C-My Rectifier3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products


    V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
    V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A

    APPLICATIONS
    For use in low voltage high frequency DC/DC converters,
    freewheeling diodes, and polarity protection applications

    FEATURES
    • Very low profile - typical height of 1.3 mm
    • Trench MOS Schottky technology
    • Ideal for automated placement
    • Low forward voltage drop, low power losses
    • High efficiency operation
    • Meets MSL level 1, per J-STD-020,
    LF maximum peak of 260 °C
    • AEC-Q101 qualified available
    - Automotive ordering code: base P/NHM3
    • Material categorization


    Description
    This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
    Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

    Features :
    Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

    Product Technical Specifications

    Category
    Discrete Semiconductor Products
     
    Diodes - Rectifiers - Single
    Mfr
    Vishay General Semiconductor - Diodes Division
    Series
    Automotive, AEC-Q101, eSMP®, TMBS®
    Package
    Tape & Reel (TR)
    Part Status
    Active
    Diode Type
    Schottky
    Voltage - DC Reverse (Vr) (Max)
    45 V
    Current - Average Rectified (Io)
    20A
    Voltage - Forward (Vf) (Max) @ If
    660 mV @ 20 A
    Speed
    Fast Recovery =< 500ns, > 200mA (Io)
    Current - Reverse Leakage @ Vr
    700 µA @ 45 V
    Capacitance @ Vr, F
    3100pF @ 4V, 1MHz
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package
    SlimDPAK
    Operating Temperature - Junction
    -40°C ~ 175°C
    Base Product Number
    V20PWM45
    Part numberV20PWM45-M3/I V20PWM45HM3/I
    Base part numberV20PWM45C-M3/I
    EU RoHSCompliant with Exemption
    ECCN (US)EAR99
    Part StatusActive
    HTS8541.29.00.95
    Quality V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier for sale
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