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Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

    Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers
     
    Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers
    • Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers
    • Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers
    • Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers
    • Buy cheap Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC from wholesalers

    Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

    Ask Lasest Price
    Brand Name : zmkj
    Model Number : GaN-FS-C-U-C50-SSP
    Price : 1000~3000usd/pc
    Payment Terms : T/T
    Supply Ability : 50pcs per month
    Delivery Time : 1-5weeks
    • Product Details
    • Company Profile

    Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

    2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

    4inch 2inch free-standing GaN substrates HVPE GaN Wafers


    GaN Wafer Characteristic

    1. III-Nitride(GaN,AlN,InN)

    Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

    a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.


    Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.


    Application

    GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
    Laser Projection Display, Power Device, etc.

    • Laser Projection Display, Power Device, etc. Date storage
    • Energy-efficient lighting Full color fla display
    • Laser Projecttions High- Efficiency Electronic devices
    • High- Frequency Microwave Devices High-energy Detection and imagine
    • New energy solor hydrogen technology Environment Detection and biological medicine
    • Light source terahertz band

    Specification for free-standing GaN wafers

    Size2"4"
    Diameter50.8 mm 士 0.3 mm100.0 mm 士 0.3 mm
    Thickness400 um 士 30 um450 um 士 30 um
    Orientation(0001) Ga-face c-plane (standard); (000-1) N-face (optional)
    002 XRD Rocking Curve FWHM< 100 arcsec
    102 XRD Rocking Curve FWHM< 100 arcsec
    Lattice Radius of Curvature> 10 m (measured at 80% x diameter)
    Offcut Toward m-plane0.5° ± 0.15° toward [10-10] @ wafer center
    Offcut Toward Orthogonal a-plane0.0° ± 0.15° toward [1-210] @ wafer center
    Offcut In-Plane DirectionThe c-plane vector projection points toward the major OF
    Major Orientation Flat Plane(10-10) m-plane 2° (standard); ±0.1° (optional)
    Major Orientation Flat Length16.0 mm ±1 mm32.0 mm ± 1 mm
    Minor Orientation Flat OrientationGa-face = major OF on bottom and minor OF on left
    Minor Orientation Flat Length8.0 mm ± 1 mm18.0 mm ± 1 mm
    Edge Bevelbeveled
    TTV (5 mm edge exclusion)< 15 um< 30 um
    Warp (5 mm edge exclusion)< 20 um< 80 um
    Bow (5 mm edge exclusion)-10 um to +5 um-40 um to +20 um
    Front Side Roughness (Sa)< 0.3 nm (AFM: 10 um x 10 um area)
    < 1.5 nm (WLI: 239 um x 318 um area)
    Back Side Surface Finishpolished (standard); etch (optional)
    Back Side Roughness (Sa)polished: < 3 nm (WLI: 239 um x 318 um area)
    etched: 1 um ± 0.5 um (WLI: 239 um x 318 um area)
    Laser Markback side on major flat
    Electrical PropertiesDopingResistivity
    N-type ⑸ licon)< 0.02 ohm-cm
    UID< 0.2 ohm-cm
    Semi-Insulating (Carbon)> 1E8 ohm-cm
    Pits Grading SystemDensity (pits/cm2)2" (pits)4" (pits)
    Production< 0.5< 10< 40
    Research< 1.5< 30< 120
    Dummy< 2.5< 50< 200

    ABOUT OUR OEM Factory


    Our Factroy Enterprise Vision
    we will provide high quality GaN substrate and application technology for the industry with our factory.
    High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
    and high stability LDs, high power and high reliability micro-wave devices, High brightness
    and high efficiency, energy-saving LED.

    -FAQ –
    Q: What you can supply logistics and cost?
    (1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
    (2) If you have your own express number, it's great.
    If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

    Q: What's the delivery time?
    (1) For the standard products such as 2inch 0.33mm wafer.
    For inventory: the delivery is 5 workdays after order.
    For customized products: the delivery is 2 or 4 workweeks after order.

    Q: How to pay?
    100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

    Q: What's the MOQ?
    (1) For inventory, the MOQ is 5pcs.
    (2) For customized products, the MOQ is 5pcs-10pcs.
    It depends on quantity and technics.

    Q: Do you have inspection report for material?
    We can supply ROHS report and reach reports for our products.

    Quality Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC for sale
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