8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED
application
GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium
nitride (GaN) has been widely used in power devices and blue
light-emitting diodes due to its wide energy gap.
Introduction
There is a growing need for energy saving and advancements in
information and communication systems. To meet these needs, we have
developed a wide-bandgap semiconductor substrate with gallium
nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon
substrates, we can produce large, inexpensive semiconductor
substrates for next-generation devices
.
Target: For home appliances: switchgears and inverters with
breakdown voltages in the hundreds. For mobile phone base stations:
high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than
other silicon carbide or sapphire substrates, and we can provide
GaN devices tailored to customer requirements.
Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in
a crystal that does not contain electrons (semiconductor materials
with a band gap larger than silicon are often referred to as wide
band gap semiconductors). Wide-bandgap material with good optical
transparency and high electrical breakdown voltage
Heterojunction
is a stack of different materials. Generally speaking, in the
semiconductor field, relatively thin films of semiconductor
materials with different compositions are stacked. In the case of
mixed crystals, heterojunctions with atomically smooth interfaces
and good interface properties are obtained. Due to these
interfaces, a layer of two-dimensional electron gas with high
electron mobility is created
Specs for Blue GaN-on-Si LED Epi-wafers
ZMSH Semiconductor is committed to produce GaN LED epi wafers on Si
substrates with varied
wafer size of 100 mm to 200 mm. The wafer quality meets the
following specs:
We are dedicated to providing high quality GaN epiwafers for Power
electronic, RF and Micro-LED applications.
History • Founded in 2012 as a pure epi-foundry of GaN wafers
Technology • Patented technology covering substrate engineering ,
buffer design, active region
optimization for high quality, flat and crack free epi-structures.
• Core technical team members all have 10+ years experience in GaN
Capacity
• 3300m2 class 1000 cleanroom
• 200k pcs/year for 150mm GaN epiwafers
Product
Diversity
• GaN-on-Si (up to 300mm)
• GaN-on-SiC (up to 150mm)
• GaN-on-HR_Si (up to 200mm)
• GaN-on-Sapphire (up to 150mm)
• GaN-on-GaN
IP & Quality • ~400 patent filed in China, US, Japan etc.
with >100 granted
• License of ~80 patents from imec
• ISO9001:2015 certificate for design and
manufacture of GaN epi material
