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Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

    Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
     
    Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
    • Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
    • Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers

    Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

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    Brand Name : Crystro
    Model Number : CR2202241-04
    Certification : ISO:9001, ISO:14001
    Price : USD 20~200/pc
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Supply Ability : 20000pcs per month
    Delivery Time : 1-4weeks
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    Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

    Customized Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS

    Crystro can customize Surface Acoustic Piezoelectric Wafers including :

    Lithium Niobate,Lithium Tantalate,Quartz Crystal as reuqired cutting orientation and size,our Piezoelectric Effect crystals are grown by Czochralski method. Max diameter reach 6inch,we can custom size and specs ,rougness<0.5nm.
    Dia 3" 4" 6" wafers are all available as per requirement.


    Crystro possess Corning Flatmaster 200 Profiler, Laser marking equipment, AOI and 6-step cleaning line.


    Crystro provides:


    Excellent photoelectric property
    High Damage Threshold
    High Curie Temperature



    Basic Properties of LiTaO3:

    MaterialLithium NiobateLithium TantalateQuartz Crystal
    Diameter / Size3’’, 4’’, 6’’, 8’’3’’, 4’’, 6’’3’’, 4’’, 5’’, 6’’, 8’’
    Cut TypeX / Y / ZX / Y-Z / X-112YX / Y / Z
    36Y / 64Y/128Y28Y / 36Y / 42YAT / ST / DT
    Surface FinishDouble side polish / Single side polish
    Thickness0.25mm / 0.35mm / 0.50mm / 1.00mm / 2.00mm
    TTV< 5um
    PLTV>98% (5mm*5mm)
    LTV< 1.5um
    Bow-25um < Bow < +25um
    Warp< 30um
    RoughnessRa<0.5nm, Ra<1nm
    Curie Temp.1142℃ ± 2℃605℃ ± 2℃573℃
    Edge ProfileRound Ground, "C" Shape
    Flats22±2mm, 32.5±2mm, 47.5±2mm, 57.5±2mm, Notch
    As per request
    Dope withEr, MgOFewith or without seed
    Front SideRoughness Ra<= 10A
    Back SideRoughness Ra: 0.2--0.7um GC#1000, GC#2000
    AppearanceNo Cracks, saw marks, stains
    Single DomianCompleted Polarization / ReducedNo Stress


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