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BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

    Buy cheap BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC from wholesalers
     
    Buy cheap BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC from wholesalers
    • Buy cheap BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC from wholesalers
    • Buy cheap BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC from wholesalers

    BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

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    Brand Name : Infineon
    Model Number : BSC070N10NS3GATMA1
    Certification : ROHS
    Price : Negotiated
    Payment Terms : T/T, Western Union
    Supply Ability : 5000PCS
    Delivery Time : 5 working days
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    BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

    07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC


    Description:

    Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.

    Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).


    Potential Applications:
    Synchronous rectification for AC-DC SMPS
    Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
    Isolated DC-DC converters (telecom and datacom systems
    Or-ing switches and circuit breakers in 48V systems
    Class D audio amplifiers
    Uninterruptable power supplies (UPS)


    Summary of Features:
    Excellent switching performance
    World’s lowest R DS(on)
    Very low Q g and Q gd
    Excellent gate charge x R DS(on) product (FOM)
    RoHS compliant-halogen free
    MSL1 rated 2

    Benefits

    Environmentally friendly
    Increased efficiency
    Highest power density
    Less paralleling required
    Smallest board-space consumption
    Easy-to-design products


    Specifications:

    Category
     
    Transistors - FETs, MOSFETs - Single
    Mfr
    Infineon Technologies
    Series
    OptiMOS™
    Package
    Tape & Reel (TR)
    Part Status
    Active
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    100 V
    Current - Continuous Drain (Id) @ 25°C
    90A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
    Rds On (Max) @ Id, Vgs
    7mOhm @ 50A, 10V
    Vgs(th) (Max) @ Id
    3.5V @ 75µA
    Gate Charge (Qg) (Max) @ Vgs
    55 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    4000 pF @ 50 V
    FET Feature
    -
    Power Dissipation (Max)
    114W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Surface Mount
    Supplier Device Package
    PG-TDSON-8-1
    Package / Case
    8-PowerTDFN
    Base Product Number
    BSC070
    ParametricsBSC070N10NS3G
    Ciss3000 pF
    Coss520 pF
    ID (@25°C) max90 A
    IDpuls max360 A
    Operating Temperature min max-55 °C 150 °C
    Ptot max114 W
    PackageSuperSO8 5x6
    PolarityN
    QG (typ @10V)42 nC
    RDS (on) (@10V) max7 mΩ
    Rth1.1 K/W
    VDS max100 V
    VGS(th) min max2.7 V 2 V 3.5 V

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