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Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector

    Buy cheap Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector from wholesalers
     
    Buy cheap Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector from wholesalers
    • Buy cheap Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector from wholesalers
    • Buy cheap Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector from wholesalers
    • Buy cheap Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector from wholesalers

    Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector

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    Brand Name : Upperbond
    Model Number : Maker
    Certification : CE, ISO
    Price : Negotiable
    Payment Terms : 50% front payment
    Supply Ability : 10000 pcs/month
    Delivery Time : 5-8 days
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    Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector

    Sasib 3000 Nano Fast Switching Irfz44ns Cigarette Packer Detector


    A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.


    All-Transistor Car Radio


    The first "production" all-transistor car radio was developed by Chrysler and Philco corporations and it was announced in the April 28, 1955 edition of the Wall Street Journal. Chrysler had made the all-transistor car radio, Mopar model 914HR, available as an option starting in fall 1955 for its new line of 1956 Chrysler and Imperial cars which first hit the dealership showroom floors on October 21, 1955.


    Importance


    Transistors are the key active components in practically all modern electronics. Many thus consider the transistor to be one of the greatest inventions of the 20th century.


    The invention of the first transistor at Bell Labs was named an IEEE Milestone in 2009. The list of IEEE Milestones also includes the inventions of the junction transistor in 1948 and the MOSFET in 1959.


    Absolute Maximum Ratings


    ParameterMax.Units
    Id @ Tq = 25°CContinuous Drain Current, Vgs @ 10V49A
    lD @ Tc = 100°CContinuous Drain Current, Vgs @ 10V35
    IdmPulsed Drain Current ①160
    PD @Ta = 25°CPower Dissipation3.8W
    PD @TC = 25°CPower Dissipation94W
    Linear Derating Factor0.63W/°C
    VgsGate-to-Source Voltage±20V
    IarAvalanche Current①25A
    EarRepetitive Avalanche Energy®9.4mJ
    dv/dtPeak Diode Recovery dv/dt ③5.0V/ns
    TjOperating Junction and-55 to + 175°C

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