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Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts

    Buy cheap Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts from wholesalers
     
    Buy cheap Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts from wholesalers
    • Buy cheap Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts from wholesalers
    • Buy cheap Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts from wholesalers
    • Buy cheap Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts from wholesalers

    Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts

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    Brand Name : Upperbond
    Model Number : Maker
    Certification : CE, ISO
    Price : Negotiable
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Supply Ability : 10000 pcs/month
    Delivery Time : 5-8 days
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    Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts

    Through Hole Version Mosfet Irfz44ns HLP Cigarette Machine Parts


    A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.


    High-Frequency Transistor


    The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.


    Naming


    The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor.


    IRFZ44NS/LPbF


    ParameterMin.
    V(BR)DSSDrain-to-Source Breakdown Voltage55
    △V(BR)DSS 仏 TjBreakdown Voltage Temp. Coefficient
    RDS(on)Static Drain-to-Source On-Resistance
    VGS(th)Gate Threshold Voltage2.0
    gtsForward Transconductance19
    bssDrain-to-Source Leakage Current
    lossGate-to-Source Forward Leakage
    Gate-to-Source Reverse Leakage
    QgTotal Gate Charge
    QgsGate-to-Source Charge
    QgdGate-to-Drain ("Miller") Charge
    td(on)Turn-On Delay Time
    trRise Time
    td(off)Turn-Off Delay Time
    tfFall Time
    LsInternal Source Inductance
    CjssInput Capacitance
    CossOutput Capacitance
    CrssReverse Transfer Capacitance
    EasSingle Pulse Avalanche Energy®

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